2SC4209 View Datasheet(PDF) - Toshiba
Part Name
Description
View to exact match
2SC4209 Datasheet PDF : 3 Pages
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4209
Driver Stage Amplifier Applications
Voltage Amplifier Applications
· Complementary to 2SA1620
2SC4209
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
Unit
80
V
80
V
5
V
300
mA
60
mA
200
mW
150
°C
-55~150
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
IEBO
VCB = 50 V, IE = 0
VEB = 5 V, IC = 0
V (BR) CEO IC = 5 mA, IB = 0
hFE (1)
VCE = 2 V, IC = 50 mA
(Note)
hFE (2) VCE = 2 V, IC = 200 mA
VCE (sat) IC = 200 mA, IB = 10 mA
VBE
VCE = 2 V, IC = 5 mA
fT
VCE = 10 V, IC = 10 mA
Cob
VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE (1) classification O: 70~140, Y: 120~240
Marking
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Min Typ. Max Unit
¾
¾
0.1
mA
¾
¾
0.1
mA
80
¾
¾
V
70
¾ 240
40
¾
¾
¾
¾
0.5
V
0.55 ¾
0.8
V
¾ 100 ¾ MHz
¾
10
¾
pF
1
2003-03-27
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