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BUTW92(1997) View Datasheet(PDF) - STMicroelectronics

Part Name
Description
View to exact match
BUTW92
(Rev.:1997)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
BUTW92 Datasheet PDF : 4 Pages
1 2 3 4
BUTW92
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
MAX
0.7
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICES
Collector Cut-off
VCE = 450 V
Current (VBE = -1.5V) VCE = 450 V
TC = 100oC
IEBO
Emitter Cut-off Current
(IC = 0)
VCES
Collector-Emitter
Breakdown Voltage
(VEB =0)
VEBO
Emitter-Base
Breakdown Voltage
(IC = 0)
VCEO(sus)Collector-Emitter
Sustaining Voltage
(IB=0)
VCE(sat)Collector-Emitter
Saturation Voltage
VEB = 5 V
IC = 5 mA
IE = 50 mA
IC = 200 mA
IC = 60 A
IC = 60 A
IB = 15 A
IB = 15 A
TC = 100oC
VBE(sat)Base-Emitter
Saturation Voltage
IC = 60 A
IC = 60 A
IB = 15 A
IB = 15 A TC = 100oC
hFEDC Current Gain
IC = 60 A
IC = 60 A
IC = 5 A
VCE = 3 V
VCE = 3 V TC = 100oC
VCE = 3 V
RESISTIVE LOAD
ts
Storage Time
tf
Fall Time
IC = 50 A
IB1 = -IB2 = 10 A
VCC = 250 V
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min.
500
7
250
9
6
Typ.
0.8
1.1
1.2
250
Max.
50
1
50
1
1.5
1.9
2
65
1.4
300
Unit
µA
mA
µA
V
V
V
V
V
V
V
µs
ns
2/4
 

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