IRG4RC10S
3.0
2.0
Square wave:
60% of rated
voltage
1.0
Ideal diodes
For both:
Duty cycle: 50%
TJ = 125˚C
Tsink= 90˚C
Gate drive as specified
Power Dissipation = 0.70W
0.0
0.1
1
10
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
Triangular wave:
Clamp voltage:
80% of rated
)
100
100
100
TJ = 25 °C
10
TJ = 150 °C
VGE = 15V
20µs PULSE WIDTH
1
0.8
1.2
1.6
2.0
2.4
2.8
3.2
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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10 TJ = 150 °C
TJ = 25 °C
VCC = 50V
5µs PPUULLSSEEWWIDIDTHTH
1
6
8
10
12
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3