IRG4RC10S View Datasheet(PDF) - International Rectifier

Part Name

Description

View to exact match

IRG4RC10S

INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT

International Rectifier 

IRG4RC10S

3.0

2.0

Square wave:

60% of rated

voltage

1.0

Ideal diodes

For both:

Duty cycle: 50%

TJ = 125˚C

Tsink= 90˚C

Gate drive as specified

Power Dissipation = 0.70W

0.0

0.1

1

10

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

Triangular wave:

Clamp voltage:

80% of rated

)

100

100

100

TJ = 25 °C

10

TJ = 150 °C

VGE = 15V

20µs PULSE WIDTH

1

0.8

1.2

1.6

2.0

2.4

2.8

3.2

VCE , Collector-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics

www.irf.com

10 TJ = 150 °C

TJ = 25 °C

VCC = 50V

5µs PPUULLSSEEWWIDIDTHTH

1

6

8

10

12

VGE , Gate-to-Emitter Voltage (V)

Fig. 3 - Typical Transfer Characteristics

3

Share Link: