M59DR032 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

View to exact match

M59DR032

32 Mbit (2Mb x16, Dual Bank, Page) 1.8V Supply Flash Memory

STMicroelectronics 

M59DR032A

M59DR032B

32 Mbit (2Mb x16, Dual Bank, Page)

1.8V Supply Flash Memory

s SUPPLY VOLTAGE

– VDD = VDDQ = 1.65V to 2.2V for Program,

Erase and Read

– VPP = 12V for fast Program (optional)

s ASYNCHRONOUS PAGE MODE READ

– Page Width: 4 words

– Page Access: 35ns

– Random Access: 100ns

s PROGRAMMING TIME

– 10µs by Word typical

– Double Word Programming Option

s MEMORY BLOCKS

– Dual Bank Memory Array: 4 Mbit - 28 Mbit

– Parameter Blocks (Top or Bottom location)

s DUAL BANK OPERATIONS

– Read within one Bank while Program or

Erase within the other

– No delay between Read and Write operations

s BLOCK PROTECTION/UNPROTECTION

– All Blocks protected at Power Up

– Any combination of Blocks can be protected

s COMMON FLASH INTERFACE (CFI)

s 64 bit SECURITY CODE

s ERASE SUSPEND and RESUME MODES

s 100,000 PROGRAM/ERASE CYCLES per

BLOCK

s 20 YEARS DATA RETENTION

– Defectivity below 1ppm/year

s ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M59DR032A: A0h

– Bottom Device Code, M59DR032B: A1h

TSOP48 (N)

12 x 20mm

BGA

TFBGA48 (ZB)

8 x 6 balls array

Figure 1. Logic Diagram

VDD VDDQ VPP

21

A0-A20

16

DQ0-DQ15

W

E

M59DR032A

G

M59DR032B

RP

WP

VSS

AI02544B

March 2001

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