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2N6987UJAN View Datasheet(PDF) - Microsemi Corporation

Part Name
Description
View to exact match
2N6987UJAN
Microsemi
Microsemi Corporation Microsemi
2N6987UJAN Datasheet PDF : 2 Pages
1 2
TECHNICAL DATA
MULTIPLE (QUAD) PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/558
Devices
2N6987
2N6987U
2N6988
Qualified Level
JAN
JANTX
JANTXV
JANS
MAXIMUM RATINGS (1)
Ratings
Collector-Emitter Voltage (4)
Collector-Base Voltage (4)
Emitter-Base Voltage (4)
Collector Current
Total Power Dissipation
@ TA = +250C
2N6987 (2)
2N6987U (2)
2N6988 (3)
Symbol
VCEO
VCBO
VEBO
IC
PT
Operating & Storage Junction Temperature Range
Top, Tstg
1) Maximum voltage between transistors shall be 500 Vdc
2) Derate linearly 8.57 mW/0C above TA = +250C
3) Derate linearly 2.286 mW/0C above TA = +250C.
4) Ratings apply to each transistor in the array.
Value
60
60
5.0
600
Units
Vdc
Vdc
Vdc
mAdc
1.5
1.0
W
0.4
-65 to +200
0C
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
Collector-Base Cutoff Current
V(BR)CEO
VCB = 60 Vdc
ICBO
VCB = 50 Vdc
Emitter-Base Cutoff Current
VBE = 5.0 Vdc
IEBO
VEB = 3.5 Vdc
Min.
60
2N6987*
TO- 116
2N6987U*
20 PIN LEADLESS
2N6988*
14 PIN FLAT PACK
*See appendix A for
package outline
Max.
Unit
Vdc
10
µAdc
10
ηAdc
10
µAdc
50
ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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