FCX1149A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
VALUE
TYP. MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -30
V
IC=-100A
Collector-Emitter
Breakdown Voltage
V(BR)CES -25
V
IC=-100A
Collector-Emitter
Breakdown Voltage
V(BR)CEO -25
V
IC=-10mA*
Collector-Emitter
Breakdown Voltage
V(BR)CEV -25
V
IC=-100A, VEB=+1V
Emitter-Base
Breakdown Voltage
V(BR)EBO -5
V
IE=-100A
Collector Cut-Off Current ICBO
Emitter Cut-Off Current IEBO
Collector Emitter Cut-Off ICES
Current
-0.3 -100 nA
-0.3 -100 nA
-0.3 -100 nA
VCB=-24V
VEB=-4V
VCES=-20V
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
-45
-100
-140
-200
-230
-930
-80
mV
-170 mV
-240 mV
-300 mV
-350 mV
-1050 mV
IC=-0.1A, IB=-1mA*
IC=-0.5A, IB=-3mA*
IC=-1A, IB=-7mA*
IC=-3A, IB=-100mA*
IC=-4A, IB=-140mA*
IC=-3A, IB=-100mA*
Base-Emitter Turn-On
Voltage
VBE(on)
-840 -1000 mV
IC=-3A, VCE=-2V*
Static Forward Current hFE
Transfer Ratio
Transition Frequency
fT
270 450
250 400 800
150 260
115 190
50
IC=-10mA, VCE=-2V*
IC=-0.5A, VCE=-2V*
IC=-3.0A, VCE=-2V*
IC=-5.0A, VCE=-2V*
IC=-10.0A, VCE=-2V*
135
MHz IC=-50mA, VCE=-10V
f=50MHz
Output Capacitance
Ccb
Switching Times
ton
50
pF
150
ns
toff
270
ns
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
VCB=-10V, f=1MHz
IC=-4A, IB=-40mA,
VCC=-10V
IC=-4A, IB=40mA,
VCC=-10V