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TIPL760B View Datasheet(PDF) - Power Innovations

Part Name
Description
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TIPL760B
Power-Innovations
Power Innovations Power-Innovations
TIPL760B Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
TIPL760B, TIPL760C
NPN SILICON POWER TRANSISTORS
MAY 1989 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
TIPL760B
500
VCEO(sus) sustaining voltage
IC = 10 mA L = 25 mH
(see Note 2)
TIPL760C
550
VCE = 1100 V VBE = 0
TIPL760B
50
Collector-emitter
ICES cut-off current
VCE = 1200 V
VCE = 1100 V
VBE = 0
VBE = 0
TC = 100°C
TIPL760C
TIPL760B
50
200
VCE = 1200 V VBE = 0
TC = 100°C
TIPL760C
200
ICEO
Collector cut-off
current
VCE = 500 V
VCE = 550 V
IB = 0
IB = 0
TIPL760B
50
TIPL760C
50
Emitter cut-off
IEBO
current
VEB = 10 V IC = 0
1
Forward current
hFE
transfer ratio
VCE = 5 V IC = 0.5 A
(see Notes 3 and 4)
20
60
Collector-emitter
VCE(sat) saturation voltage
Base-emitter
VBE(sat) saturation voltage
Current gain
ft
bandwidth product
IB = 0.4 A
IB = 0.6 A
IB = 0.6 A
IB = 0.4 A
IB = 0.6 A
IB = 0.6 A
VCE = 10 V
IC = 2 A
IC = 3 A
IC = 3 A
IC = 2 A
IC = 3 A
IC = 3 A
IC = 0.5 A
(see Notes 3 and 4)
TC = 100°C
(see Notes 3 and 4)
TC = 100°C
f = 1 MHz
1.0
2.5
5.0
1.2
1.4
1.3
12
Cob Output capacitance VCB = 20 V IE = 0
f = 0.1 MHz
110
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
µA
µA
mA
V
V
MHz
pF
thermal characteristics
RθJC
PARAMETER
Junction to case thermal resistance
MIN TYP MAX UNIT
1.56 °C/W
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
tsv
Voltage storage time
trv
Voltage rise time
tfi
Current fall time
tti
Current tail time
IC = 3 A
VBE(off) = -5 V
txo
Cross over time
tsv
Voltage storage time
trv
Voltage rise time
tfi
Current fall time
tti
Current tail time
IC = 3 A
VBE(off) = -5 V
txo
Cross over time
IB(on) = 0.6 A
IB(on) = 0.6 A
TC = 100°C
(see Figures 1 and 2)
(see Figures 1 and 2)
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
TYP MAX
2.5
300
250
150
400
3
500
250
150
750
UNIT
µs
ns
ns
ns
ns
µs
ns
ns
ns
ns
PRODUCT INFORMATION
2
 

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