MMBT6429LT3 View Datasheet(PDF) - ON Semiconductor
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MMBT6429LT3 Datasheet PDF : 6 Pages
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MMBT6428LT1 MMBT6429LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
ON CHARACTERISTICS
DC Current Gain
(IC = 0.01 mAdc, VCE = 5.0 Vdc)
MMBT6428
MMBT6429
hFE
250
500
(IC = 0.1 mAdc, VCE = 5.0 Vdc)
MMBT6428
250
MMBT6429
500
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
MMBT6428
250
MMBT6429
500
(IC = 10 mAdc, VCE = 5.0 Vdc)
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.5 mAdc)
(IC = 100 mAdc, IB = 5.0 mAdc)
Base – Emitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 mAdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
MMBT6428
MMBT6429
250
500
VCE(sat)
—
—
VBE(on)
0.56
fT
100
Cobo
—
Cibo
—
Max
—
—
650
1250
—
—
—
—
0.2
0.6
0.66
700
3.0
8.0
Unit
—
Vdc
Vdc
MHz
pF
pF
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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