BCW30LT1 View Datasheet(PDF) - ON Semiconductor
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BCW30LT1 Datasheet PDF : 8 Pages
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BCW30LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –2.0 mAdc, IE = 0)
Collector–Emitter Breakdown Voltage
(IC = –100 µAdc, VEB = 0)
Collector–Base Breakdown Voltage
(IC = –10 µAdc, IC = 0)
Emitter–Base Breakdown Voltage
(IE = –10 µAdc, IC = 0)
Collector Cutoff Current
(VCB = –32 Vdc, IE = 0)
(VCB = –32 Vdc, IE = 0, TA = 100°C)
ON CHARACTERISTICS
DC Current Gain
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = –10 mAdc, IB = –0.5 mAdc)
Base–Emitter On Voltage
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(IE = 0, VCB = –10 Vdc, f = 1.0 MHz)
Noise Figure
(IC = –0.2 mAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
Symbol
Min
V(BR)CEO
–32
V(BR)CES
–32
V(BR)CBO
–32
V(BR)EBO
–5.0
ICBO
—
—
hFE
215
VCE(sat)
—
VBE(on)
–0.6
Cobo
—
NF
—
Max
—
—
—
—
–100
–10
500
–0.3
–0.75
7.0
10
Unit
Vdc
Vdc
Vdc
Vdc
nAdc
µAdc
—
Vdc
Vdc
pF
dB
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