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BCW30LT1G View Datasheet(PDF) - ON Semiconductor

Part Name
Description
View to exact match
BCW30LT1G
ON-Semiconductor
ON Semiconductor ON-Semiconductor
BCW30LT1G Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
BCW30LT1
General Purpose
Transistors
PNP Silicon
Features
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
Collector − Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
−32
−32
−5.0
−100
Vdc
Vdc
Vdc
mAdc
Characteristic
Symbol
Value
Unit
Total Device Dissipation
FR-5 Board (Note 1)
TA = 25°C
Derate above 25°C
PD
mW
225
1.8
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
556
°C/W
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
PD
300
mW
2.4
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23 (TO−236AB)
CASE 318−08
STYLE 6
MARKING DIAGRAM
C2 M G
G
1
C2
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BCW30LT1
BCW30LT1G
Package
Shipping
SOT−23 3000/Tape & Reel
SOT−23 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
1
October, 2005 − Rev. 1
Publication Order Number:
BCW30LT1/D
 

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