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STD3NM60 Ver la hoja de datos (PDF) - STMicroelectronics

Número de piezacomponentes Descripciónfabricante
STD3NM60 N-channel 600 V, 1.3 ?, 3 A TO-220, DPAK, IPAK Zener-protected MDmesh? Power MOSFET STMICROELECTRONICS
STMicroelectronics STMICROELECTRONICS
STD3NM60 Datasheet PDF : 17 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
STD3NM60, STD3NM60-1, STP4NM60
3
Test circuits
Test circuits
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
VDD
12V
47k
1k
100nF
RL
2200
3.3
µF
µF VDD
IG=CONST
VD
Vi=20V=VGMAX
100
D.U.T.
VGS
RG
t(s) PW
D.U.T.
2200
µF
2.7k
VG
47k
uc PW
rod AM01468v1
1k
AM01469v1
P Figure 17. Test circuit for inductive load
Figure 18. Unclamped inductive load test
te switching and diode recovery times
circuit
Obsole G
t(s) - 25
A
D
D.U.T.
S
B
AA
FAST
DIODE
L=100µH
B
3.3
B
µF
D
G
uc RG
S
1000
µF
VDD
Vi
L
VD
2200
3.3
µF
µF
VDD
ID
D.U.T.
rod Pw
P AM01470v1
lete Figure 19. Unclamped inductive waveform
Figure 20. Switching time waveform
AM01471v1
bso V(BR)DSS
O VD
ton
tdon
tr
toff
tdoff tf
VDD
IDM
ID
0
VDD
90%
10% VDS
90%
VGS
90%
10%
AM01472v1
0
10%
AM01473v1
Doc ID 8370 Rev 4
9/17
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