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STD3NM60 Ver la hoja de datos (PDF) - STMicroelectronics

Número de piezacomponentes Descripciónfabricante
STD3NM60 N-channel 600 V, 1.3 ?, 3 A TO-220, DPAK, IPAK Zener-protected MDmesh? Power MOSFET STMICROELECTRONICS
STMicroelectronics STMICROELECTRONICS
STD3NM60 Datasheet PDF : 17 Pages
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STD3NM60, STD3NM60-1, STP4NM60
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
Source-drain current
Source-drain current
(pulsed)
3
A
-
12
A
VSD (2) Forward on voltage
ISD = 3 A, VGS = 0
-
1.5 V
trr
Reverse recovery time ISD = 3 A, di/dt = 100 A/µs,
224
ns
Qrr
Reverse recovery charge VDD = 100 V, Tj = 25°C
-
1
nC
IRRM Reverse recovery current (see Figure 17)
9
A
trr
Reverse recovery time ISD = 3 A, di/dt = 100 A/µs,
296
ns
) Qrr
Reverse recovery charge VDD = 100 V, Tj = 150°C
-
1.4
µC
t(s IRRM Reverse recovery current (see Figure 17)
9.3
A
c 1. Pulse width limited by safe operating area.
u 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Prod Table 8. Gate-source Zener diode (1)
te Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ole BVGSO
Gate-source breakdown
voltage
Igs=± 1mA (open drain)
30
-
-
V
bs 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
O ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
- cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
Obsolete Product(s) usage of external components.
Doc ID 8370 Rev 4
5/17
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