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STD3NM60 データシートの表示(PDF) - STMicroelectronics

部品番号コンポーネント説明メーカー
STD3NM60 N-channel 600 V, 1.3 ?, 3 A TO-220, DPAK, IPAK Zener-protected MDmesh? Power MOSFET STMICROELECTRONICS
STMicroelectronics STMICROELECTRONICS
STD3NM60 Datasheet PDF : 17 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
STD3NM60, STD3NM60-1, STP4NM60
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
STP4NM60
STD3NM60
STD3NM60-1
VDS Drain-source voltage (VGS= 0)
600
V
VGS Gate- source Voltage
± 30
V
ID
t(s) ID
c IDM (1)
u PTOT
Prod dv/dt (2)
Drain current (continuous) at TC= 25°C
Drain current (continuous) at TC= 100°C
Drain current (pulsed)
Total dissipation at TC= 25°C
Derating factor
Peak diode recovery voltage slope
te Tj
Operating junction temperature
le Tstg Storage temperature
so 1. Pulse width limited by safe operating area
b 2. ISD 3 A, di/dt 400 µA, VDD V(BR)DSS, Tj TJMAX.
t(s) - O Table 3. Thermal data
uc Symbol
Parameter
rod Rthj-case Thermal resistance junction-case max
te P Rthj-amb Thermal resistance junction-ambient max
Obsole Tl
Maximum lead temperature for soldering
purpose
4
3
2.52
1.9
16
12
69
42
0.55
0.33
15
-65 to 150
A
A
A
W
W/°C
V/ns
°C
°C
Value
Unit
To-220
DPAK / IPAK
1.82
3
62.5
°C/W
°C/W
300
°C
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not-repetitive (pulse
width limited by Tjmax)
1.5
A
Single pulse avalanche energy
EAS
(starting Tj= 25 °C, ID= IAR, VDD= 50 V)
200
mJ
Doc ID 8370 Rev 4
3/17
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