STD3NM60 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

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STD3NM60

N-channel 600 V, 1.3 Ω, 3 A TO-220, DPAK, IPAK Zener-protected MDmesh™ Power MOSFET

STMicroelectronics 

STD3NM60, STD3NM60-1, STP4NM60

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

STP4NM60

STD3NM60

STD3NM60-1

VDS Drain-source voltage (VGS= 0)

600

V

VGS Gate- source Voltage

± 30

V

ID

t(s) ID

c IDM (1)

u PTOT

Prod dv/dt (2)

Drain current (continuous) at TC= 25°C

Drain current (continuous) at TC= 100°C

Drain current (pulsed)

Total dissipation at TC= 25°C

Derating factor

Peak diode recovery voltage slope

te Tj

Operating junction temperature

le Tstg Storage temperature

so 1. Pulse width limited by safe operating area

b 2. ISD ≤3 A, di/dt ≤400 µA, VDD ≤V(BR)DSS, Tj ≤TJMAX.

t(s) - O Table 3. Thermal data

uc Symbol

Parameter

rod Rthj-case Thermal resistance junction-case max

te P Rthj-amb Thermal resistance junction-ambient max

Obsole Tl

Maximum lead temperature for soldering

purpose

4

3

2.52

1.9

16

12

69

42

0.55

0.33

15

-65 to 150

A

A

A

W

W/°C

V/ns

°C

°C

Value

Unit

To-220

DPAK / IPAK

1.82

3

62.5

°C/W

°C/W

300

°C

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-repetitive (pulse

width limited by Tjmax)

1.5

A

Single pulse avalanche energy

EAS

(starting Tj= 25 °C, ID= IAR, VDD= 50 V)

200

mJ

Doc ID 8370 Rev 4

3/17

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