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Número de piezacomponentes Descripciónfabricante
STD3NM60 N-channel 600 V, 1.3 ?, 3 A TO-220, DPAK, IPAK Zener-protected MDmesh? Power MOSFET STMICROELECTRONICS
STMicroelectronics STMICROELECTRONICS
STD3NM60 Datasheet PDF : 17 Pages
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STP4NM60
STD3NM60, STD3NM60-1
N-channel 600 V, 1.3 , 3 A TO-220, DPAK, IPAK
Zener-protected MDmesh™ Power MOSFET
Features
Type
VDSS
RDS(on)
(@Tjmax) max
ID
) STD3NM60
t(s STD3NM60-1 650
3A
< 1.5
c STP4NM60
4A
PW
42 W
69 W
rodu High dv/dt and avalanche capabilities
te P Improved ESD capability
le Low input capacitance and gate charge
o Low gate input resistance
bs Tight process control and high manufacturing
O yields
t(s) - Applications
c Switching
rodu Description
P Modems technology applies the benefits of the
te multiple drain process to STMicroelectronics' well-
known PowerMESH™ horizontal layout structure.
le The resulting product offers low on-resistance,
so high dv/dt capability and excellent avalanche
Obcharacteristics.
3
2
1
TO-220
3
1
DPAK
3
2
1
IPAK
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
Package
Packing
STD3NM60
D3NM60
DPAK
Tape and reel
STD3NM60-1
D3NM60
IPAK
Tube
STP4NM60
P4NM60
TO-220
Tube
September 2009
Doc ID 8370 Rev 4
1/17
www.st.com
17
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