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STD30PF03L View Datasheet(PDF) - STMicroelectronics

Part Name
Description
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STD30PF03L Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
STD30PF03L
STD30PF03L-1
P-CHANNEL 30V - 0.025- 24A DPAK/IPAK
STripFET™ II POWER MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STD30PF03L
STD30PF03L-1
30 V
30 V
< 0.028
< 0.028
24 A
24 A
s TYPICAL RDS(on) = 0.025
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s LOW THRESHOLD DRIVE
s LOW GATE CHARGE
s EXTREMELY LOW FIGURE OF MERIT
(RDS(on) * Qg)
3
1
DPAK
3
2
1
IPAK
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting transis-
tor shows extremely high packing density for low
on-resistance and low gate charge.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s DC-DC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS
Gate- source Voltage
ID (#)
Drain Current (continuous) at TC = 25°C
ID (#)
Drain Current (continuous) at TC = 100°C
IDM (l) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
(#) Current limited by wire bonding
May 2002
Value
Unit
30
V
30
V
± 16
V
24
A
24
A
96
A
70
W
0.47
W/°C
– 55 to 175
°C
175
°C
Note:For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
1/8
 

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