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FQA17P10 View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
FQA17P10 100V P-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
FQA17P10 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Typical Characteristics
VGS
Top : -15.0 V
-10.0 V
-8.0 V
-7.0 V
101
-6.5 V
-5.5 V
-5.0 V
Bottom : -4.5 V
100
10-1
10-1
Notes :
1. 250μ s Pulse Test
2. TC = 25
100
101
-V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
VGS = - 10V
V = - 20V
GS
Note : TJ = 25
20
40
60
80
-I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
10-1
C
oss
Ciss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2002 Fairchild Semiconductor Corporation
101
175
100
25
10-1
2
-55
Notes :
1. VDS = -40V
2. 250μ s Pulse Test
4
6
8
10
-VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.0
17525
Notes :
1. V = 0V
GS
2. 250μ s Pulse Test
0.5
1.0
1.5
2.0
2.5
3.0
-VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = -20V
DS
VDS = -50V
8
VDS = -80V
6
4
2
Note : ID = -16.5 A
0
0
5
10
15
20
25
30
35
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. B, August 2002
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