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FQA12P20 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
FQA12P20
Fairchild
Fairchild Semiconductor Fairchild
FQA12P20 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Elerical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = -250 µA
-200 --
ID = -250 µA, Referenced to 25°C --
-
IDSS
Zero Gate Voltage Drain Current
VDS = -200 V, VGS = 0 V
VDS = -160 V, TC = 125°C
--
--
--
--
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V
--
--
--
--
--
--
-1
-10
-100
100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = -250 µA
-3.0 --
-5.0
V
VGS = -10 V, ID = -6.3 A
-- 0.36 0.47
VDS = -40 V, ID = -6.3 A (Note 4)
--
6.6
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 920 1200 pF
-- 190 250
pF
--
30
40
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = -100 V, ID = -11.5 A,
RG = 25
--
20
50
ns
-- 195 400
ns
--
40
90
ns
(Note 4, 5)
--
60 130
ns
VDS = -160 V, ID = -11.5 A,
--
31
40
nC
VGS = -10 V
-- 8.1
--
nC
(Note 4, 5)
--
16
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
-- -12.6
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
-- -50.4
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -12.6 A
--
--
-5.0
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -11.5 A,
-- 180
--
ns
dIF / dt = 100 A/µs
(Note 4)
--
1.44
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 7.65mH, IAS = -12.6A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD -11.5A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Rev. B, May 2000
 

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