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BCP53-16 View Datasheet(PDF) - Zetex => Diodes

Part Name
Description
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BCP53-16 Datasheet PDF : 1 Pages
1
SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 – AUGUST 1995
7
FEATURES
* Suitable for AF drivers and output stages
* High collector current and Low VCE(sat)
BCP53
C
COMPLEMENTARY TYPE – BCP56
E
PARTMARKING DETAILS – BCP53
BCP53 – 10
C
B
BCP53 – 16
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature
Range
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
-100
V
-80
V
-5
V
-1.5
A
-1
A
2
W
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -100
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO -80
V
IC=- 10mA *
Emitter-Base
Breakdown Voltage
V(BR)EBO -5
V
IE=-10µA
Collector Cut-Off
ICBO
Current
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
-100 nA
-20 µA
-10
µA
-0.5 V
VCB=-30V
VCB=-30V, Tamb=150°C
VEB=-5V
IC=-500mA, IB=-50mA*
Base-Emitter Turn-On VBE(on)
Voltage
-1.0 V
IC=-500mA, VCE=-2V*
Static Forward Current hFE
40
250
Transfer Ratio
25
BCP53-10 63
100 160
BCP53-16 100 160 250
IC=-150mA, VCE=-2V*
IC=-500mA, VCE=-2V*
IC=-150mA, VCE=-2V*
IC=-150mA, VCE=-2V*
Transition Frequency fT
125
MHz IC=-50mA, VCE=-10V,
f=100MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
3 - 15
 

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