SI3443DV View Datasheet(PDF) - ON Semiconductor
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SI3443DV Datasheet PDF : 5 Pages
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Si3443DV
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced
using Fairchild's advanced PowerTrench process that
has been especially tailored to minimize on-state
resistance and yet maintain low gate charge for
superior switching performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint for
applications where the larger packages are impractical.
Applications
Load switch
Battery protection
Power management
Features
-4 A, -20 V. RDS(ON) = 0.065 Ω @ VGS = -4.5 V
RDS(ON) = 0.100 Ω @ VGS = -2.5 V
Fast switching speed.
Low gate charge (7.2nC typical).
High performance trench technology for extremely
low RDS(ON).
SuperSOTTM-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
S
D
1
D
2
G
D
SuperSOT TM-6 D
3
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Drain Current - Pulsed
Power Dissipation for Single Operation
(Note 1)
(Note 1a)
(Note 1a)
(Note 1b)
TJ, Tstg
Operating and Storage Junction Temperature Range
6
5
4
Ratings
-20
±8
-4
-20
1.6
0.8
-55 to +150
Units
V
V
A
W
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
.443
Si3443DV
7’’
78
30
Tape Width
8mm
°C/W
°C/W
Quantity
3000 units
2001 Semiconductor Components Industries, LLC.
September-2017, Rev.1
Publication Order Number:
Si3443DV/D
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