BF1201WR View Datasheet(PDF) - Philips Electronics
Part Name
Description
View to exact match
BF1201WR Datasheet PDF : 16 Pages
| |||
Philips Semiconductors
N-channel dual-gate PoLo MOS-FETs
Product specification
BF1201; BF1201R;
BF1201WR
25
handbook, halfpage
ID
(mA)
20
15
10
5
0
0
0.5
VG2-S = 4 V
MCD935
3.5 V
3V
2.5 V
2V
1.5 V
1V
1
1.5
2
2.5
VG1-S (V)
VDS = 5 V.
Tj = 25 °C.
Fig.5 Transfer characteristics; typical values.
handbook,2h4alfpage
ID
(mA)
16
8
MCD936
VG1-S = 1.8 V
1.7 V
1.6 V
1.5 V
1.4 V
1.3 V
1.2 V
0
0
2
4
6
8
10
VDS (V)
VG2-S = 4 V.
Tj = 25 °C.
Fig.6 Output characteristics; typical values.
handboo1k,0h0alfpage
IG1
(µA)
80
60
40
20
0
0
0.5
VG2-S = 4 V
MCD937
3.5 V
3V
2.5 V
2V
1.5 V
1
1.5
2
2.5
VG1-S (V)
VDS = 5 V.
Tj = 25 °C.
Fig.7 Gate 1 current as a function of gate 1
voltage; typical values.
2000 Mar 29
handbook,4h0alfpage
yfs
(mS)
30
MCD938
VG2-S = 4 V
3.5 V
20
3V
2.5 V
10
2V
0
0
5
10
15
20
25
ID (mA)
VDS = 5 V.
Tj = 25 °C.
Fig.8 Forward transfer admittance as a function
of drain current; typical values.
5
|
|
Share Link: 