datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

BD132 View Datasheet(PDF) - Inchange Semiconductor

Part Name
Description
View to exact match
BD132
Iscsemi
Inchange Semiconductor Iscsemi
BD132 Datasheet PDF : 0 Pages
Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
BD132
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEsat-1 Collector-emitter saturation voltage IC=-0.5A; IB=-50mA
-0.3
V
VCEsat-2 Collector-emitter saturation voltage IC=-2A; IB=-0.2A
-0.7
V
VBEsat-1 Base-emitter saturation voltage
IC=-0.5A; IB=-50mA
-1.2
V
VBEsat-2 Base-emitter saturation voltage
ICBO
Collector cut-off current
IC=-2A; IB=-0.2A
VCB=-50V; IE=0
VCB=-50V; IE=0 Tj=150
-1.5
V
-50
nA
-10
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-50
nA
hFE-1
DC current gain
IC=-0.5A ; VCE=-12V
40
hFE-2
DC current gain
IC=-2A ; VCE=-1V
20
fT
Transition frequency
IC=-0.25A; VCE=-5V ;f=100MHz 60
MHz
2
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]