STW7NA80 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
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| STW7NA80 Datasheet PDF : 0 Pages | |||
STW7NA80-STH7NA80FI
THERMAL DATA
fMhj-case
Rthj-amb
Rthc-sink
I,
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO-247
0.83
ISOWATT218
2.08
30
0.1
300
°c/w
°c/w
°c/w
°C
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max,8 < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
6.3
320
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tease = 25 °C unless otherwise specified)
OFF
Symbol
V(BR)DSS
loss
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
lD=250|jA VGS=0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
TC=100°C
Gate-body Leakage
Current (VDs = 0)
VQS = ± 30 V
Min.
800
Typ.
Max.
25
50
± 100
Unit
V
HA
HA
nA
ONM
Symbol
VGS(th)
RoS(on)
ID(OH)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 250 ^A
Static Drain-source On VGS = 10V ID= 3.5 A
Resistance
On State Drain Current VDS > ID(OH) X RDS(on)max
VGS = 1 0 V
Min. Typ. Max. Unit
2.25
3
3.75
V
1.68 1.9
Q
7
A
DYNAMIC
Symbol
9fS (*)
Ciss
Coss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > to(on) X RDS(on)max
lp= 3.5 A
Min.
4.5
Typ.
6.3
Max.
Unit
S
V D S = 25 V f = 1 MHz VGS = 0
1330 1750 pF
160 210
pF
40
55
pF
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