HI-506A View Datasheet(PDF) - Renesas Electronics
Part Name
Description
View to exact match
HI-506A Datasheet PDF : 20 Pages
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HI-506A, HI-507A, HI-508A, HI-509A
Die Characteristics
DIE DIMENSIONS:
159 mils x 83.9 mils
METALLIZATION:
Type: CuAl
Thickness: 16kÅ 2kÅ
SUBSTRATE POTENTIAL (NOTE):
-VSUPPLY
PASSIVATION:
Silox: 12kÅ 2kÅ
Nitride: 3.5kÅ 1kÅ
WORST CASE CURRENT DENSITY:
1.4 x 105 A/cm2
TRANSISTOR COUNT:
485
PROCESS:
CMOS-DI
NOTE: The substrate appears resistive to the -VSUPPLY terminal, therefore it may be left floating (Insulating Die Mount) or it may be mounted on a
conductor at -VSUPPLY potential.
Metallization Mask Layouts
HI-506A
EN
A0
A1 A2
A3 VREF
(18)
(17)
(16) (15) (14) (13)
GND
(12)
HI-507A
EN
A0
A1 A2
NC VREF
(18)
(17)
(16) (15) (14) (13)
GND
(12)
IN 1
(19)
IN 2
(20)
IN 3
(21)
IN 4
(22)
IN 5
(23)
IN 6
(24)
IN 7
(25)
IN 8
(26)
V- (27)
OUT (28)
+V (1)
IN 9
(11)
IN 10
(10)
IN 11
(9)
IN 12
(8)
IN 13
(7)
IN 14
(6)
IN 15
(5)
IN 16
(4)
NC (2)
IN 1A
(19)
IN 2A
(20)
IN 3A
(21)
IN 4A
(22)
IN 5A
(23)
IN 6A
(24)
IN 7A
(25)
IN 8A
(26)
V- (27)
OUT A (28)
+V (1)
IN 1B
(11)
IN 2B
(10)
IN 3B
(9)
IN 4B
(8)
IN 5B
(7)
IN 6B
(6)
IN 7B
(5)
IN 8B
(4)
OUT B(2)
FN3143 Rev.6.00
October 30, 2007
Page 15 of 20
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