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Description
BCR112W View Datasheet(PDF) - Infineon Technologies
Part Name
Description
View to exact match
BCR112W
NPN Silicon Digital Transistor
Infineon Technologies
BCR112W Datasheet PDF : 9 Pages
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BCR112...
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Collector current
Total power dissipation-
BCR112,
T
S
≤
102°C
BCR112F,
T
S
≤
128°C
BCR112L3,
T
S
≤
135°C
BCR112T,
T
S
≤
109°C
BCR112U,
T
S
≤
118°C
BCR112W,
T
S
≤
124°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
BCR112
BCR112F
BCR112L3
BCR112T
BCR112U
BCR112W
Symbol
V
CEO
V
CBO
V
EBO
V
i(on)
I
C
P
tot
T
j
T
stg
Symbol
R
thJS
Value
50
50
10
15
100
200
250
250
250
250
250
150
-65 ... 150
Value
≤
240
≤
90
≤
60
≤
165
≤
133
≤
105
1For
calculation of
R
thJA
please refer to Application Note Thermal Resistance
Unit
V
mA
mW
°C
Unit
K/W
2
Aug-29-2003
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