STK2NA60 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
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STK2NA60 Datasheet PDF : 10 Pages
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STK2NA60
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
2.5
oC/ W
Rthj-amb Thermal Resistance Junction-ambient
Max
80
oC/ W
Rthj-amb Thermal Resistance Case-sink
Typ
0.7
oC/ W
Tl
Maximum Lead Temperature For Soldering Purpose
275
oC
AVALANCHE CHARACTERISTICS
Symb ol
IA R
EAS
EAR
IA R
Pa ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(st arting Tj = 25 oC, ID = IAR, VD D = 50 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)
Max Value
1.9
18
0.7
1.2
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symb ol
Parameter
Test Conditions
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA VG S = 0
IDSS
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 125 oC
IG SS
Gate-body Leakage
Current (VD S = 0)
VGS = ± 30 V
Min.
600
Typ.
Max.
Unit
V
25
µA
250
µA
± 100 nA
ON (∗)
Symb ol
VG S(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 1 A
R esist anc e
On St ate Drain Current VDS > ID( on) x RD S(on) max
VGS = 10 V
Min.
2. 25
Typ.
3
7.2
Max.
3. 75
8
Unit
V
Ω
1.4
A
DYNAMIC
Symb ol
gfs (∗)
Ciss
Coss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID( on) x RD S(on) max ID = 1 A
VDS = 25 V f = 1 MHz VG S = 0
Min.
0. 65
Typ.
1.2
Max.
Unit
S
230 300
pF
42
55
pF
10
15
pF
2/10
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