MOSFET
IRF630
N-channel mosfet transistor
INCHANGE
Features
·With TO-220 package
·Low on-state and thermal resistance
·Fast switching
·VDSS=200V; RDS(ON)≤0.4Ω;ID=9A
·1.gate 2.drain 3.source
Absolute Maximum Ratings Tc=25℃
SYMBOL
VDSS
VGS
ID
Ptot
Tj
Tstg
PARAMETER
Drain-source voltage (VGS=0)
Gate-source voltage
Drain Current-continuous@ TC=25℃
Total Dissipation@TC=25℃
Max. Operating Junction temperature
Storage temperature
RATING
200
±20
9
74
150
-65~150
UNIT
V
V
A
W
℃
℃
123
TO-220
Electrical Characteristics Tc=25℃
SYMBOL
PARAMETER
V(BR)DSS Drain-source breakdown voltage
CONDITIONS
VGS=0; ID=0.25mA
VGS(TH) Gate threshold voltage
VDS= VGS; ID=1mA
RDS(ON) Drain-source on-stage resistance
VGS=10V; ID=5.4A
IGSS Gate source leakage current
VGS=±20V;VDS=0
IDSS
Zero gate voltage drain current
VDS=200V; VGS=0
VSD
Diode forward voltage
IF=9A; VGS=0
MIN MAX UNIT
200
V
2
4
V
400 mΩ
±100 nA
10
uA
1.2
V