MOSFET
IRF634
N-channel mosfet transistor
INCHANGE
Features
·With TO-220 package
·Simple drive requirements
·Fast switching
·VDSS=250V; RDS(ON)≤0.45Ω;ID=8.1A
·1.gate 2.drain 3.source
Absolute Maximum Ratings Tc=25℃
SYMBOL
PARAMETER
VDSS
Drain-source voltage (VGS=0)
VGS
Gate-source voltage
ID
Drain Current-continuous@ TC=25℃
Ptot
Total Dissipation@TC=25℃
Tj
Max. Operating Junction temperature
Tstg
Storage temperature
RATING
250
±20
8.1
74
150
-65~150
UNIT
V
V
A
W
℃
℃
Electrical Characteristics Tc=25℃
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-source breakdown voltage VGS=0; ID=0.25mA
VGS(TH) Gate threshold voltage
VDS= VGS; ID=0.25mA
RDS(ON) Drain-source on-stage resistance VGS=10V; ID=5.1A
IGSS Gate source leakage current
VGS=±20V;VDS=0
IDSS Zero gate voltage drain current VDS=250V; VGS=0
VSD Diode forward voltage
IF=8.1A; VGS=0
123
TO-220
MIN MAX UNIT
250
V
2
4
V
450 mΩ
±100 nA
25
uA
2.0
V