FX20ASJ-03 View Datasheet(PDF) - MITSUBISHI ELECTRIC
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FX20ASJ-03 Datasheet PDF : 4 Pages
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MITSUBISHI Pch POWER MOSFET
FX20ASJ-03
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = –1mA, VDS = 0V
VGS = ±20V, VDS = 0V
VDS = –30V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –10A, VGS = –10V
ID = –2A, VGS = –4V
ID = –10A, VGS = –10V
ID = –10A, VDS = –5V
VDS = –10V, VGS = 0V, f = 1MHz
VDD = –15V, ID = –10A, VGS = –10V, RGEN = RGS = 50Ω
IS = –10A, VGS = 0V
Channel to case
IS = –10A, dis/dt = 50A/µs
Min.
–30
—
—
–1.3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ.
—
—
—
–1.8
0.11
0.21
–1.1
5.8
1130
232
83
15
33
49
26
–1.0
—
50
Max.
—
±0.1
–0.1
–2.3
0.13
0.29
–1.3
—
—
—
—
—
—
—
—
–1.5
4.17
—
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
40
32
24
16
8
0
0
50
100
150
200
MAXIMUM SAFE OPERATING AREA
–2
–102
–7
–5
–3
–2
tw =
10µs
–101
–7
–5
–3
–2
–100
–7
–5
TC = 25°C
Single Pulse
100µs
1ms
10ms
DC
–3
–2
–2 –3
–5 –7–100
–2 –3
–5 –7–101
–2 –3
–5 –7–102
–2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
Unit
V
µA
mA
V
Ω
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
OUTPUT CHARACTERISTICS
(TYPICAL)
–20
Tc = 25°C
Pulse Test
–6V
–16
VGS =
–10V
–8V
–12 –7V
–5V
PD = 30W
–8
–4V
–4
–3V
0
0 –1.0 –2.0 –3.0 –4.0 –5.0
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
–10
VGS = –10V –8V –6V
–5V
–8
–6
–4V
–4
Tc = 25°C
Pulse Test
–2
–3V
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
DRAIN-SOURCE VOLTAGE VDS (V)
Jan.1999
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