IRFL4105 View Datasheet(PDF) - Kersemi Electronic Co., Ltd.
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IRFL4105 Datasheet PDF : 9 Pages
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IRFL4105
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
55 ––– ––– V
––– 0.058 ––– V/°C
––– ––– 0.045 Ω
2.0 ––– 4.0 V
3.8 ––– ––– S
––– ––– 25 µA
––– ––– 250
––– ––– 100
nA
––– ––– -100
––– 23 35
––– 3.4 5.1 nC
––– 9.8 15
––– 7.1 –––
––– 12 –––
ns
––– 19 –––
––– 12 –––
––– 660 –––
––– 230 ––– pF
––– 99 –––
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 3.7A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 1.9A
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 3.7A
VDS = 44V
VGS = 10V, See Fig. 6 and 13
VDD = 28V
ID = 3.7A
RG = 6.0Ω
RD = 7.5Ω, See Fig. 10
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
Min. Typ. Max. Units
Conditions
––– ––– 1.3
––– ––– 30
MOSFET symbol
showing the
A integral reverse
p-n junction diode.
––– ––– 1.3 V TJ = 25°C, IS = 3.7A, VGS = 0V
––– 55 82 ns TJ = 25°C, IF = 3.7A
––– 120 170 nC di/dt = 100A/µs
2014-8-9
2
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