SI9410DY View Datasheet(PDF) - Philips Electronics

Part Name

Description

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SI9410DY

N-channel enhancement mode field-effect transistor

Philips Electronics 

Philips Semiconductors

Si9410DY

N-channel enhancement mode field-effect transistor

30

VGS = 0 V

IS

(A)

20

03ae51

10

VGS

(V)

8

6

ID = 7 A

Tj = 25 ºC

VDD = 15 V

03ae53

10

0

0

150 ºC

0.3

0.6

Tj = 25 ºC

0.9

1.2

VSD (V)

4

2

0

0

10

20

30 QG (nC) 40

Tj = 25 °C and 150 °C; VGS = 0 V

Fig 13. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

values.

ID = 7 A; VDD =15 V

Fig 14. Gate-source voltage as a function of gate

charge; typical values.

9397 750 08238

Product data

Rev. 02 — 05 July 2001

© Philips Electronics N.V. 2001. All rights reserved.

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