SI9410DY View Datasheet(PDF) - Philips Electronics
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SI9410DY Datasheet PDF : 13 Pages
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Philips Semiconductors
Si9410DY
N-channel enhancement mode field-effect transistor
30
10V 4.5 V
ID
(A)
20
03ae47
30
ID VDS > ID x RDSon
(A)
20
25 ºC
03ae49
Tj = 150 ºC
10
10
3V
0
0
0.5
1
1.5
2
VDS (V)
0
0
1
2
3
4
5
VGS (V)
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = 25 °C and 150 °C; VDS > ID x RDSon
Fig 6. Transfer characteristic: drain current as a
function of gate-source voltage; typical values.
0.04
03ae48
2
RDSon Tj = 25 ºC
VGS = 4.5 V
a
(Ω)
1.6
0.03
1.2
0.02
10 V
0.8
0.01
0.4
03ad57
0
0
10
20
30
ID (A)
0
-60
0
60
120 Tj (ºC) 180
Tj = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
a = -------R----D----S--o---n-------
R
D S o n ( 25 °C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 08238
Product data
Rev. 02 — 05 July 2001
© Philips Electronics N.V. 2001. All rights reserved.
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