Philips Semiconductors
Si9410DY
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Static characteristics
VGS(th) gate-source threshold voltage
ID = 250 µA; VDS = VGS; Figure 9
IDSS
drain-source leakage current
IGSS
ID(on)
gate-source leakage current
on-state drain current
VDS = 24 V; VGS = 0 V
Tj = 25 °C
Tj = 55 °C
VGS = ±20 V; VDS = 0 V
VDS ≥ 5 V; VGS = 10 V
RDSon drain-source on-state resistance VGS = 10 V; ID = 7 A; Figure 7 and 8
VGS = 5 V; ID = 4 A; Figure 8
VGS = 4.5 V; ID = 3.5 A; Figure 7 and 8
Dynamic characteristics
gfs
Qg(tot)
forward transconductance
total gate charge
VDS = 15 V; ID = 7 A; Figure 11
ID = 7 A; VDS = 15 V; VGS = 10 V; Figure 14
Qgs
gate-source charge
Qgd
td(on)
gate-drain (Miller) charge
turn-on delay time
VDD = 25 V; RD = 25 Ω; VGS = 10 V; RG = 6 Ω
tr
turn-on rise time
td(off)
turn-off delay time
tf
turn-off fall time
Source-drain (reverse) diode
VSD
source-drain (diode forward) voltage IS = 2 A; VGS = 0 V; Figure 13
trr
reverse recovery time
IS = 2 A; dIS/dt = −100 A/µs
Min Typ Max Unit
1−−V
− − 2 µA
− − 25 µA
− − 100 nA
30 − − A
− 24 30 mΩ
− 30 40 mΩ
− 32 50 mΩ
− 15 − S
− 32 50 nC
− 3 − nC
− 5 − nC
− 8 30 ns
− 11 60 ns
− 33 150 ns
− 27 140 ns
− 0.85 1.1 V
− 60 − ns
9397 750 08238
Product data
Rev. 02 — 05 July 2001
© Philips Electronics N.V. 2001. All rights reserved.
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