SI9410DY View Datasheet(PDF) - Philips Electronics

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Description

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SI9410DY

N-channel enhancement mode field-effect transistor

Philips Electronics 

Philips Semiconductors

Si9410DY

N-channel enhancement mode field-effect transistor

8. Characteristics

Table 5: Characteristics

Tj = 25 °C unless otherwise specified

Symbol Parameter

Conditions

Static characteristics

VGS(th) gate-source threshold voltage

ID = 250 µA; VDS = VGS; Figure 9

IDSS

drain-source leakage current

IGSS

ID(on)

gate-source leakage current

on-state drain current

VDS = 24 V; VGS = 0 V

Tj = 25 °C

Tj = 55 °C

VGS = ±20 V; VDS = 0 V

VDS ≥ 5 V; VGS = 10 V

RDSon drain-source on-state resistance VGS = 10 V; ID = 7 A; Figure 7 and 8

VGS = 5 V; ID = 4 A; Figure 8

VGS = 4.5 V; ID = 3.5 A; Figure 7 and 8

Dynamic characteristics

gfs

Qg(tot)

forward transconductance

total gate charge

VDS = 15 V; ID = 7 A; Figure 11

ID = 7 A; VDS = 15 V; VGS = 10 V; Figure 14

Qgs

gate-source charge

Qgd

td(on)

gate-drain (Miller) charge

turn-on delay time

VDD = 25 V; RD = 25 Ω; VGS = 10 V; RG = 6 Ω

tr

turn-on rise time

td(off)

turn-off delay time

tf

turn-off fall time

Source-drain (reverse) diode

VSD

source-drain (diode forward) voltage IS = 2 A; VGS = 0 V; Figure 13

trr

reverse recovery time

IS = 2 A; dIS/dt = −100 A/µs

Min Typ Max Unit

1−−V

− − 2 µA

− − 25 µA

− − 100 nA

30 − − A

− 24 30 mΩ

− 30 40 mΩ

− 32 50 mΩ

− 15 − S

− 32 50 nC

− 3 − nC

− 5 − nC

− 8 30 ns

− 11 60 ns

− 33 150 ns

− 27 140 ns

− 0.85 1.1 V

− 60 − ns

9397 750 08238

Product data

Rev. 02 — 05 July 2001

© Philips Electronics N.V. 2001. All rights reserved.

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