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SI9410DY View Datasheet(PDF) - Philips Electronics

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SI9410DY Datasheet PDF : 13 Pages
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Philips Semiconductors
Si9410DY
N-channel enhancement mode field-effect transistor
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
Rth(j-a) thermal resistance from junction to ambient
Conditions
mounted on a printed circuit board;
minimum footprint, t 10 s Figure 4
7.1 Transient thermal impedance
Value Unit
50 K/W
102
Zth(j-amb) δ = 0.5
(K/W)
0.2
10 0.1
0.05
0.02
1
single pulse
10-1
10
10
10-2
10-1
1
03ae45
P
δ
=
tp
T
tp
t
T
10
102 tp (s)
103
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration.
9397 750 08238
Product data
Rev. 02 — 05 July 2001
© Philips Electronics N.V. 2001. All rights reserved.
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