IRF640 View Datasheet(PDF) - Comset Semiconductors
Part Name
Description
View to exact match
IRF640 Datasheet PDF : 3 Pages
| |||
SEMICONDUCTORS
IRF640
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VDSS
VGS(th)
IDSS
IGSS
RDS(on)
Drain-Source Breakdown
Voltage
Gate-threshold Voltage
Zero Gate Voltage Drain
Current
Gate-Source leakage
Current
Drain-Source on Resistance
ID= 250 µA, VGS= 0 V
ID= 250 µA, VGS= VDS
VDS= 200 V, VGS= 0 V
Tj= 25 °C
VDS= 200 V, VGS= 0 V
Tj= 125 °C
VGS= 20 V, VDS= 0 V
ID= 10 A, VGS= 10 V
DYNAMIC CHARACTERISTICS
Symbol
Ratings
gfs
CISS
COSS
CRSS
td(on)
tr
td(off)
tf
Transconductance
Input Capacitance
Output Capacitance
Reverse transfer
Capacitance
Turn-on Delay Time
Rise time
Turn-off Delay Time
Fall Time
REVERSE DIODE
Test Condition(s)
VDS = 2*ID*RDS(on)max
ID= 9 A
VGS= 0 V, VDS= 25 V
f= 1MHz
VDD= 100 V,
ID= 18 A, RGS= 25 Ω
Symbol
IS
ISM
VSD
Trr
Qrr
Ratings
Test Condition(s)
Inverse Diode Continuous
Forward Current.
Inverse diode direct current,
pulsed.
Inverse Diode Forward
voltage
Reverse Recovery Time
Reverse Recovery Charge
TC = 25°C
TC = 25°C
VGS = 0 V, IF = 18 A
VR = 25 V, IF = 18 A
di/dt = 100 A/µs, TC =
150°C
09/11/2012
COMSET SEMICONDUCTORS
Min Typ Max Unit
200 -
-
V
2
3
4
V
-
- 25
µA
-
- 250
-
- 100 nA
- 0.15 0.18 Ω
Min Typ Max Unit
7 11
-
S
- 1200 1560
- 200 260 pF
- 60 80
- 20 50
-
-
145 300
145 300
ns
- 110 230
Min Typ Max Unit
-
- 18
A
-
- 72
-
-
2
V
- 130 - ns
- 0.8 - µC
2/3
|
|
Share Link: 