SD103AW View Datasheet(PDF) - Diode Semiconductor Korea
Part Name
Description
MFG CO.
Diode Semiconductor Korea
Schottky Barrier Diode
SD103AW/SD103BW/SD103CW
Parameter
Reverse Breakdown Voltage
SD103AW
SD103BW
SD103CW
Symbol
V(BR)R
Min.
40
30
20
Typ.
Forward voltage
VF
Reverse current
SD103AW
SD103BW IRM
SD103CW
Capacitance between terminals
CT
50
Reverse Recovery Time
trr
10
Max. Unit
V
0.37
V
0.60
5.0 μA
pF
ns
Conditions
IR=10μA
IR=10μA
IR=10μA
IF=20mA
IF=200mA
VR=30V
VR=20V
VR=10V
VR=0,f=1MHz
IR=IF=200mA
Irr=0.1*IR,RL=100Ω
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
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