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1F3 View Datasheet(PDF) - Diode Semiconductor Korea

Part Name
Description
View to exact match
1F3
DSK
Diode Semiconductor Korea DSK
1F3 Datasheet PDF : 2 Pages
1 2
Diode Semiconductor Korea
1F1---1F7
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
10
N.1.
N.1.
trr
+0.5A
(+)
50VDC
(APPROX)
(-)
D.U.T.
1
N.1.
OSCILLOSCOPE
(NOTE 1)
(-)
PULSE
GENERATOR
(NOTE2)
(+)
0
-0.25A
-1.0A
1cm
NOTES:1.RISETIME=7ns MAX. INPUTIMPEDANCE=1M .22pF
2.RISE TIME=10ns MAX. SOURCE IMPEDANCE=5O
SETTIMEBASEFOR50/100 ns /cm
FIG.2 --TYPICAL FORWARD
CURRENT DERATING CURVE
1.0
.8
.6
.4
.2
0
0
Single Phase
Half Wave 60HZ
Resistive or
Inductive Load
50
100
150 175
AMBIENT TEMPERATURE,
FIG.3 --TYPICAL FORWARD
CHARACTERISTICS
100
10
4
2
1.0
TJ=25
Pulse Width=300ยตS
0.4
0.2
0.1
0.06
0.04
0.02
0.01
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG.4--PEAK FORWARD SURGE CURRENT
25
20
15
TJ=125
8.3ms Single Half
Sine-Wave
10
5
0
12
4
10
20
40
100
NUMBER OF CYCLES AT 60 Hz
FIG.5---TYPICAL JUNCTION CAPACITANCE
10
16
14
12
10
4
TJ=25
f=1MHz
2
1
.1 .2 .4
1.0 2 4
10 20 40
100
REVERSE VOLTAGE, VOLTS
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