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BSP33 View Datasheet(PDF) - Philips Electronics

Part Name
Description
View to exact match
BSP33
Philips
Philips Electronics Philips
BSP33 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Philips Semiconductors
PNP medium power transistors
Product specification
BSP31; BSP32; BSP33
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
Rth j-s
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point
93
K/W
12
K/W
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
BSP32
DC current gain
IE = 0; VCB = 60 V
IE = 0; VCB = 60 V; Tj = 150 °C
IC = 0; VEB = 5 V
IC = 100 µA; VCE = 5 V; note 1
IC = 100 mA; VCE = 5 V; note 1
IC = 500 mA; VCE = 5 V; note 1
VCEsat
VBEsat
Cc
Ce
fT
BSP31; BSP33
IC = 100 µA; VCE = 5 V; note 1
IC = 100 mA; VCE = 5 V; note 1
IC = 500 mA; VCE = 5 V; note 1
collector-emitter saturation voltage IC = 150 mA; IB = 15 mA; note 1
IC = 500 mA; IB = 50 mA; note 1
base-emitter saturation voltage IC = 150 mA; IB = 15 mA; note 1
IC = 500 mA; IB = 50 mA; note 1
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
transition frequency
IC = 50 mA; VCE = 10 V; f = 100 MHz
Switching times (between 10% and 90% levels)
ton
turn-on time
toff
turn-off time
ICon = 100 mA; IBon = 5 mA; IBoff = 5 mA
Note
1. Pulse test: tp 300 µs; δ ≤ 0.01.
MIN.
10
40
30
30
100
50
100
MAX. UNIT
100 nA
50 µA
100 nA
120
300
250
500
1
1.2
20
120
mV
mV
V
V
pF
pF
MHz
500 ns
650 ns
1999 Apr 26
3
 

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