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MUR460 View Datasheet(PDF) - Zibo Seno Electronic Engineering Co.,Ltd

Part Name
Description
View to exact match
MUR460
ZSELEC
Zibo Seno Electronic Engineering Co.,Ltd ZSELEC
MUR460 Datasheet PDF : 0 Pages
Z ibo Seno Electronic Engineering Co., Ltd.
Features
! Diffused Junction
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
MUR405 –MUR4100
4.0A ULTRAFAST DIODE
A
B
A
Mechanical Data
! Case: DO-201AD, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 1.2 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
! Lead Free: For RoHS / Lead Free Version
C
D
DO-201AD
Dim
Min
Max
A
245.45
B
87.520
9.50
C
1.210
1.30
D
55..000
5.60
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
VRRM
VRWM
VR
MUR MUR
405 410
50 100
MUR MUR MUR MUR MUR MUR
415 420 440 460 480 4100
150 200 400 600 800 1000
Unit
V
RMS Reverse Voltage
VR(RMS)
35
70 140 210 280 420 560 700
V
Average Rectified Output Current
(Note 1)
@TA = 55°C
IO
4.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
IFSM
150
A
rated load (JEDEC Method)
Forward Voltage
@IF = 4.0A
VFM
Peak Reverse Current
@TA = 25°C
At Rated DC Blocking Voltage @TA = 100°C
IRM
Reverse Recovery Time (Note 2)
trr
1.0
1.3
1.7
V
10
100
µA
50
75
nS
Typical Junction Capacitance (Note 3)
Cj
80
50
pF
Operating Temperature Range
Tj
-65 to +150
°C
Storage Temperature Range
TSTG
-65 to +150
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
MUR405 – MUR4100
1 of 2
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