MMBT4403L View Datasheet(PDF) - ON Semiconductor

Part Name

Description

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MMBT4403L

Switching Transistor PNP Silicon

ON Semiconductor 

MMBT4403L, SMMBT4403L

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage (Note 3)

Collector −Base Breakdown Voltage

Emitter −Base Breakdown Voltage

Base Cutoff Current

Collector Cutoff Current

ON CHARACTERISTICS

(IC = −1.0 mAdc, IB = 0)

(IC = −0.1 mAdc, IE = 0)

(IE = −0.1 mAdc, IC = 0)

(VCE = −35 Vdc, VEB = −0.4 Vdc)

(VCE = −35 Vdc, VEB = −0.4 Vdc)

V(BR)CEO

V(BR)CBO

V(BR)EBO

IBEV

ICEX

−40

−

Vdc

−40

−

Vdc

−5.0

−

Vdc

−

−0.1 mAdc

−

−0.1 mAdc

DC Current Gain

(Note 3)

(Note 3)

Collector −Emitter Saturation Voltage (Note 3)

Base −Emitter Saturation Voltage (Note 3)

SMALL− SIGNAL CHARACTERISTICS

(IC = −0.1 mAdc, VCE = −1.0 Vdc)

(IC = −1.0 mAdc, VCE = −1.0 Vdc)

(IC = −10 mAdc, VCE = −1.0 Vdc)

(IC = −150 mAdc, VCE = −2.0 Vdc)

(IC = −500 mAdc, VCE = −2.0 Vdc)

(IC = −150 mAdc, IB = −15 mAdc)

(IC = −500 mAdc, IB = −50 mAdc)

(IC = −150 mAdc, IB = −15 mAdc)

(IC = −500 mAdc, IB = −50 mAdc)

hFE

VCE(sat)

VBE(sat)

30

−

−

60

−

100

−

100

300

20

−

Vdc

−

−0.4

−

−0.75

Vdc

−0.75 −0.95

−

−1.3

Current −Gain − Bandwidth Product

Collector−Base Capacitance

Emitter−Base Capacitance

Input Impedance

Voltage Feedback Ratio

Small −Signal Current Gain

Output Admittance

SWITCHING CHARACTERISTICS

(IC = −20 mAdc, VCE = −10 Vdc, f = 100 MHz)

(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)

(VBE = −0.5 Vdc, IC = 0, f = 1.0 MHz)

(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)

(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)

(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)

(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)

fT

200

−

MHz

Ccb

−

8.5

pF

Ceb

−

30

pF

hie

1.5

15

kW

hre

0.1

8.0 X 10− 4

hfe

60

500

−

hoe

1.0

100 mMhos

Delay Time

Rise Time

(VCC = −30 Vdc, VEB = −2.0 Vdc,

IC = −150 mAdc, IB1 = −15 mAdc)

td

−

15

ns

tr

−

20

Storage Time

Fall Time

(VCC = −30 Vdc, IC = −150 mAdc,

IB1 = IB2 = −15 mAdc)

ts

−

225

ns

tf

−

30

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

+2 V

0

- 16 V

SWITCHING TIME EQUIVALENT TEST CIRCUIT

< 2 ns

1.0 kW

10 to 100 ms,

DUTY CYCLE = 2%

- 30 V

200 W

< 20 ns

+14 V

CS* < 10 pF

0

-16 V

1.0 kW

1.0 to 100 ms,

Scope rise time < 4.0 ns

DUTY CYCLE = 2% + 4.0 V

*Total shunt capacitance of test jig connectors, and oscilloscope

- 30 V

200 W

CS* < 10 p

Figure 1. Turn−On Time

Figure 2. Turn−Off Time

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