BCX18 View Datasheet(PDF) - Philips Electronics
Part Name
Description
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BCX18 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP general purpose transistors
Product specification
BCX17; BCX18
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
VCEsat
VBE
Cc
fT
collector-emitter saturation
voltage
base-emitter voltage
collector capacitance
transition frequency
CONDITIONS
IE = 0; VCB = −20 V
IE = 0; VCB = −20 V; Tj = 150 °C
IC = 0; VEB = −5 V
IC = −100 mA; VCE = −1 V
IC = −300 mA; VCE = −1 V
IC = −500 mA; VCE = −1 V
IC = −500 mA; IB = −50 mA
MIN. TYP. MAX. UNIT
−
−
−100 nA
−
−
−5 µA
−
−
−100 nA
100 −
600
70 −
−
40 −
−
−
−
−620 mV
IC = −500 mA; VCE = −1 V; note 1
−
−
IE = Ie = 0; VCB = −10 V; f = 1 MHz
−
9
IC = −10 mA; VCE = −5 V; f = 100 MHz 80 −
−1.2 V
−
pF
−
MHz
Note
1. VBE decreases by approximately −2 mV/°C with increasing temperature.
1999 May 31
3
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