TCDT1110G View Datasheet(PDF) - Vishay Semiconductors
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Description
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TCDT1110G Datasheet PDF : 8 Pages
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TCDT1110/TCDT1110G
Optocoupler, Phototransistor
Output
Vishay Semiconductors
INSULATION RATED PARAMETERS
PARAMETER
TEST CONDITION
Partial discharge test voltage -
routine test
100 %, ttest = 1 s
Partial discharge test voltage -
lot test (sample test)
tTr = 60 s, ttest = 10 s,
(see figure 2)
Insulation resistance
VIO = 500 V
VIO = 500 V, Tamb = 100 °C
VIO = 500 V, Tamb = 200 °C
(construction test only)
SYMBOL
Vpd
VIOTM
Vpd
RIO
RIO
RIO
MIN.
1.6
6
1.3
1012
1011
109
TYP.
MAX.
UNIT
kV
kV
kV
Ω
Ω
Ω
300
Psi (mW)
250
200
150
100
Isi (mA)
50
VIOTM
VPd
VIOWM
VIORM
t1, t2 = 1 to 10 s
t3, t4 = 1 s
ttest = 10 s
tstres = 12 s
0
0
95 10934
25 50 75 100 125 150 175 200
Tamb - Ambeint Temperature(°C)
Fig. 3 - Derating diagram
0
t3 ttest t4
13930
t1
tTr = 60 s
t2 t stres
t
Fig. 4 - Test Pulse Diagram for Sample Test According to
DIN EN 60747-5-5/DIN EN 60747-; IEC 60747
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
Turn-off time
Turn-on time
Turn-off time
VS = 10 V, IC = 2 mA,
RL = 100 Ω (see figure 3)
VS = 10 V, IC = 2 mA,
RL = 100 Ω (see figure 3)
VS = 10 V, IF = 10 mA, RL = 1 kΩ
(see figure 4)
Turn-on time
VS = 10 V, IF = 10 mA, RL = 1 kΩ
(see figure 4)
SYMBOL
toff
ton
toff
ton
MIN.
TYP.
15.0
15.0
18.0
9.0
MAX.
UNIT
µs
µs
µs
µs
IF IF
0
RG = 50
tp = 0.01
T
tp = 50 µs
50
+ 10 V
IC = 2 mA; adjusted through
input amplitude
Channel I
Oscilloscope
Channel II
RL 1 M
100
CL 20 pF
95 10889
Fig. 5 - Test Circuit, Non-Saturated Operation
IF IF = 10 mA
0
+ 10 V
IC
RG = 50
tp = 0.01
T
tp = 50 µs
50
Channel I
Oscilloscope
Channel II RL 1 M
CL 20 pF
1k
95 10898
Fig. 6 - Test Circuit, Saturated Operation
Document Number: 83531
Rev. 1.8, 16-May-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
785
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