TCDT1110(1999) View Datasheet(PDF) - Vishay Semiconductors

Part Name

Description

View to exact match

TCDT1110
(Rev.:1999)

Optocoupler with Phototransistor Output

Vishay Semiconductors 

TCDT1110(G)

Vishay Telefunken

Maximum Safety Ratings (according to VDE 0884) see figure 1

This device is used for protective separation against electrical shock only within the maximum safety ratings.

This must be ensured by using protective circuits in the applications.

Input (Emitter)

Parameters

Forward current

Output (Detector)

Test Conditions

Symbol

Value

Unit

Isi

130

mA

Parameters

Power dissipation

Coupler

Test Conditions

Symbol

Value

Unit

Tamb ≤ 25°C

Psi

265

mW

Parameters

Rated impulse voltage

Safety temperature

Test Conditions

Symbol

Value

Unit

VIOTM

6

kV

Tsi

150

°C

Insulation Rated Parameters (according to VDE 0884)

Parameter

Test Conditions

Symbol Min. Typ. Max.

Unit

Partial discharge test voltage – 100%, ttest = 1 s

Vpd

1.6

kV

Routine test

Partial discharge test voltage – tTr = 60 s, ttest = 10 s, VIOTM

6

kV

Lot test (sample test)

Insulation resistance

(see figure 2)

VIO = 500 V

VIO = 500 V,

Vpd

1.3

RIO

1012

RIO

1011

kV

W

W

Tamb = 100°C

VIO = 500 V,

RIO

109

W

Tamb = 200°C

(construction test only)

300

Psi

250

(mW)

200

150

100

VIOTM

V

VPd

VIOWM

VIORM

t1, t2 = 1 to 10 s

t3, t4 = 1 s

ttest = 10 s

tstres = 12 s

Isi (mA)

50

0

0

95 10934

25 50 75 100 125 150 175 200

Tamb ( °C )

0

t1

13930

tTr = 60 s

t3 ttest t4

t2 tstres

t

Figure 1. Derating diagram

Figure 2. Test pulse diagram for sample test according to

DIN VDE 0884

Rev. A3, 11–Jan–99

219

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