datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

1N5626(2010) View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
1N5626
(Rev.:2010)
Vishay
Vishay Semiconductors Vishay
1N5626 Datasheet PDF : 4 Pages
1 2 3 4
1N5624, 1N5625, 1N5626, 1N5627
Vishay Semiconductors Standard Avalanche Sinterglass
Diode
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART SYMBOL MIN.
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Reverse recovery time
Reverse recovery charge
IF = 3 A
VR = VRRM
VR = VRRM, Tj = 100 °C
IR = 100 μA, tp/T = 0.01,
tp = 0.3 ms
VR = 4 V, f = 1 MHz
IF = 0.5 A, IR = 1 A, iR = 0.25 A
IF = 1 A, dI/dt = 5 A/μs, VR = 50 V
IF = 1 A, dI/dt = 5 A/μs
VF
-
IR
-
IR
-
V(BR)
-
CD
-
trr
-
trr
-
Qrr
-
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
TYP.
-
0.1
5
-
40
3.5
4.5
8
MAX
1
1
10
1600
60
5
7.5
12
UNIT
V
μA
μA
V
pF
μs
μs
μC
40
30
20
l
l
10
0
TL = constant
0 5 10 15 20 25 30
94 9563
I - Lead Length (mm)
Fig. 1 - Max. Thermal Resistance vs. Lead Length
3.5
VR =V RRM
3.0
half sinewave
R thJA =25K/W
2.5
l=10mm
2.0
1.5
1.0
R thJA =70K/W
0.5 PCB: d=25mm
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
16393
Tamb- Ambient Temperature (°C)
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
100.000
10.000
1.000
T j=175°C
0.100
0.010
T j=25°C
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
16392
V F – Forward Voltage ( V )
Fig. 2 - Forward Current vs. Forward Voltage
1000
VR = VRRM
100
10
1
25
16394
50 75 100 125 150 175
T j – Junction Temperature ( °C )
Fig. 4 - Reverse Current vs. Junction Temperature
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 86063
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Rev. 1.5, 21-Sep-10
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]