datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

1N5625GP-E3 View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
1N5625GP-E3
Vishay
Vishay Semiconductors Vishay
1N5625GP-E3 Datasheet PDF : 4 Pages
1 2 3 4
www.vishay.com
1N5624GP, 1N5625GP, 1N5626GP, 1N5627GP
Vishay General Semiconductor
100
100
10
TJ = 25 °C
Pulse Width = 300 μs
1
1 % Duty Cycle
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.1
0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
10
TJ = 125 °C
1
TJ = 75 °C
0.1
TJ = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
10
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-201AD
0.210 (5.3)
0.190 (4.8)
DIA.
1.0 (25.4)
MIN.
0.375 (9.5)
0.285 (7.2)
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN.
Revision: 09-Jun-16
3
Document Number: 88524
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]