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PZTA42,115 View Datasheet(PDF) - NXP Semiconductors.

Part Name
Description
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PZTA42,115
NXP
NXP Semiconductors. NXP
PZTA42,115 Datasheet PDF : 0 Pages
NXP Semiconductors
NPN high-voltage transistor
Product data sheet
PZTA42
FEATURES
Low current (max. 100 mA)
High voltage (max. 300 V).
APPLICATIONS
Telephony and professional communication equipment.
PINNING
PIN
1
2,4
3
base
collector
emitter
DESCRIPTION
DESCRIPTION
handbook, halfpage
4
NPN high-voltage transistor in a SOT223 plastic package.
PNP complement: PZTA92.
2, 4
1
3
1
2
3
Top view
MAM287
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb 25 °C; note 1
MIN.
65
65
MAX.
300
300
6
100
200
100
1.2
+150
150
+150
UNIT
V
V
V
mA
mA
mA
W
°C
°C
°C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
1999 May 21
2
 

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