PZT 3906
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IB = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector-base cutoff current
VCB = 30 V, IE = 0
Collector-emitter cutoff current
VCE = 30 V, + VBE = 0.5 V
Collector-base cutoff current
VCE = 30 V, + VBE = 0.5 V
DC current gain1)
IC = 0.1 mA, VCE = 1 V
IC = 1 mA, VCE = 1 V
IC = 10 mA, VCE = 1 V
IC = 50 mA, VCE = 1 V
IC = 100 mA, VCE = 1 V
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
Base-emitter saturation voltage1)
IC = 10 mA, IC = 1 mA
IC = 50 mA, IC = 5 mA
Symbol
Values
Unit
min. typ. max.
V(BR)CE0 40
–
V(BR)CB0 40
–
V(BR)EB0 5
–
ICB0
–
–
ICEV
–
–
IBEV
–
–
hFE
VCEsat
VBEsat
60
–
80
–
100 –
60
–
30
–
–
–
–
–
–
–
–
–
–
V
–
–
50 nA
50
50
–
–
–
300
–
–
V
0.25
0.4
0.85
0.95
1) Pulse test conditions: t ≤ 300 µs, D = 2 %
Semiconductor Group
2