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BCW70LT1G(2009) View Datasheet(PDF) - ON Semiconductor

Part Name
Description
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BCW70LT1G
(Rev.:2009)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
BCW70LT1G Datasheet PDF : 6 Pages
1 2 3 4 5 6
BCW70LT1G
TYPICAL DYNAMIC CHARACTERISTICS
500
TJ = 25°C
300
VCE = 20 V
5.0 V
200
100
70
50
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 50
IC, COLLECTOR CURRENT (mA)
Figure 12. CurrentGain — Bandwidth Product
10
TJ = 25°C
7.0
Cib
5.0
3.0
2.0
Cob
1.0
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
VR, REVERSE VOLTAGE (VOLTS)
Figure 13. Capacitance
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.05
0.02
0.03
0.02
0.01
SINGLE PULSE
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
FIGURE 16
DUTY CYCLE, D = t1/t2
P(pk)
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
READ TIME AT t1 (SEE AN-569)
ZqJA(t) = r(t) w RqJA
t2
TJ(pk) - TA = P(pk) ZqJA(t)
5.0 10 20 50 100 200
t, TIME (ms)
500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100
Figure 14. Thermal Response
104
103
102
101
100
10-1
10-2
-4
0
VCC = 30 V
ICEO
ICBO
AND
ICEX @ VBE(off) = 3.0 V
- 2 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160
0
TJ, JUNCTION TEMPERATURE (°C)
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the model
as shown in Figure 16. Using the model and the device thermal
response the normalized effective transient thermal resistance of
Figure 14 was calculated for various duty cycles.
To find ZqJA(t), multiply the value obtained from Figure 14 by the
steady state value RqJA.
Example:
Dissipating 2.0 watts peak under the following conditions:
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the reading
of r(t) is 0.22.
The peak rise in junction temperature is therefore
DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C.
For more information, see AN569.
Figure 15. Typical Collector Leakage Current
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