BCW70LT1 View Datasheet(PDF) - ON Semiconductor
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BCW70LT1 Datasheet PDF : 8 Pages
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BCW70LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage (IC = –100 µAdc, VEB = 0)
Emitter–Base Breakdown Voltage (IE = –10 µAdc, IC = 0)
V(BR)CEO
–45
V(BR)CES
–50
V(BR)EBO
–5.0
Collector Cutoff Current
(VCB = –20 Vdc, IE = 0)
(VCB = –20 Vdc, IE = 0, TA = 100°C)
ICBO
—
—
ON CHARACTERISTICS
DC Current Gain (IC = –2.0 mAdc, VCE = –5.0 Vdc)
Collector–Emitter Saturation Voltage (IC = –10 mAdc, IB = –0.5 mAdc)
hFE
215
VCE(sat)
—
Base–Emitter On Voltage (IC = –2.0 mAdc, VCE = –5.0 Vdc)
SMALL–SIGNAL CHARACTERISTICS
VBE(on)
–0.6
Output Capacitance
(IE = 0, VCB = –10 Vdc, f = 1.0 MHz)
Cobo
—
Noise Figure
NF
—
(IC = –0.2 mAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
Max
—
—
—
–100
–10
500
–0.3
–0.75
7.0
10
Unit
Vdc
Vdc
Vdc
nAdc
µAdc
—
Vdc
Vdc
pF
dB
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