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SST112 View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
SST112
Vishay
Vishay Semiconductors Vishay
SST112 Datasheet PDF : 6 Pages
1 2 3 4 5 6
J/SST111 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
100
200
rDS @ ID = 1 mA, VGS = 0
IDSS @ VDS = 20 V, VGS = 0
80
160
On-Resistance vs. Drain Current
100
TA = 25° C
80
60
rDS
IDSS
120
VGS(off) = 2 V
60
40
80
20
40
0
0
2
4
6
8
VGS(off) Gate-Source Cutoff Voltage (V)
On-Resistance vs. Temperature
200
ID = 1 mA
rDS changes X 0.7%/_C
160
0
10
120
VGS(off) = 2 V
80
4 V
40
8 V
0
55 35
15 5 25 45 65
TA Temperature ( _C)
85 105 125
Turn-Off Switching
30
td(off) independent of device VGS(off)
VDD = 5 V, VGS(L) = 10 V
24
40
20
0
1
5
4
3
2
4 V
8 V
10
100
ID Drain Current (mA)
Turn-On Switching
tr approximately independent of ID
VDD = 5 V, RG = 50
VGS(L) = 10 V
tr
td(on) @
ID = 12 mA
1
td(on) @
ID = 3 mA
0
0
30
24
2
4
6
8
10
VGS(off) Gate-Source Cutoff Voltage (V)
Capacitance vs. Gate-Source Voltage
f = 1 MHz
18
12
6
0
0
tf @
VGS(off) = 2 V
td(off)
tf @
VGS(off) = 8 V
2
4
6
8
10
ID Drain Current (mA)
Document Number: 70232
S-04028Rev. E, 04-Jun-01
18
12
6
0
0
Ciss @ VDS = 0 V
Crss @ VDS = 0 V
4
8
12
16
20
VGS Gate-Source Voltage (V)
www.vishay.com
7-3
 

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